GaN HEMTs Bring Low-Noise Power to Switching Apps (Download)
Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect transistors, which combine high levels of performance along with a low noise figure while performing at microwave frequencies.
HEMTs are somewhat different than other types of FET devices, though, enhancing performance over and above standard junction or MOSFETs. These unique devices excel in microwave radio-frequency (RF) applications. Electrons from the n-type region move through the crystal lattice and many electrons remain close to the heterojunction (the heterojunction refers to the interface area formed via the contact coupling of two or more semiconductors). Such electrons, which are only one layer thick, form as a two-dimensional electron gas.