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Dual N- and P-Channel MOSFETs

July 11, 2013
Advanced Power Electronics Corp. (USA) has announced two new power MOSFETs well-suited for battery management and protection applications, the AP9922GEO-HF-3 and AP9923GEO-HF-3, dual n- and dual p-channel enhancement-mode products respectively.

Advanced Power Electronics Corp. (USA)  has announced two new power MOSFETs well-suited for battery management and protection applications, the AP9922GEO-HF-3 and AP9923GEO-HF-3, dual n- and dual p-channel enhancement-mode products respectively.

Both products feature low on-resistance, 16mΩ for the AP9922GEO-HF-3 and 25mΩfor the AP9923GEO-HF-3, and both devices are capable of operating with gate drive down to 1.8V. RoHS-compliant and halogen-free, the devices are available in the small, thin TSSOP-8 package. 

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