The VG100 photodiode from Opto Diode provides good ultraviolet (UV) response with a 100 mm² active area. Shipped with a temporary protective cover plate, the device delivers an unsurpassed 100 percent internal quantum efficiency (QE). After exposure to megajoules/cm2, the UVG100 showed less than 2 percent responsivity loss.
All of Opto Diode's IRD products are designed for long-lifetime operation in high-particle, flux environments with no loss of responsivity. The new UVG100 absolute photodiode features advanced performance with extremely high radiation hardness. The proprietary oxynitride front window ensures successful operation without performance degradation that often occurs with high humidity and other undesirable environmental conditions.
Responsivity under test conditions at 254 nm, is a minimum of 0.08, typical 0.09, and maximum 0.13 A/W. The rise time at 10V is a maximum of 10 microseconds. The shunt resistance at ± 10 mV is a minimum of 20 MOhms; the reverse breakdown voltage is typically 10 Volts; the capacitance is typically 10 nanofarads (nF) with a maximum of 20 nF.
Ideal for applications that require extreme stability for the detection of vacuum ultraviolet and extreme ultraviolet photons, Opto Diode's UVG100 silicon photodiodes are in-stock and available for shipping now.
