Navitas Semiconductor's First GaN Power ICs Leave Silicon Behind

Navitas Semiconductor recently announced its first gallium nitride (GaN) Power ICs, using its proprietary AllGaN monolithically-integrated 650V platform. Combining GaN power FETs with GaN logic and drive circuits enables between 10 and 100 times higher switching frequency than existing silicon circuits, making power electronics smaller, lighter and lower cost. A new generation of high frequency, energy efficient converters is being enabled for smartphone and laptop chargers, OLED TVs, LED lighting, solar inverters, wireless charging devices and datacenters.

Navitas will introduce the AllGaN platform and GaN Power ICs in a keynote titled "Breaking Speed Limits with GaN Power ICs" at the Applied Power Electronics Conference (APEC) on Monday 21st March.

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