Reliable and robust with lower conduction and switching losses and the highest power density: those are the exceptional properties of the new 4.5kV IHV module from Infineon Technologies AG. The highly insulating 6.5 kV housing offers enhanced protection by means of greater creepage and clearance distance and can be used in demanding environments. With its further optimized thermal properties, the new IHV module is suitable above all for use in traction applications.
The module now available is based on an IGBT 3 with trench field stop technology and a field stop diode. In combination with a base plate made of aluminum-silicon carbide with a low expansion coefficient and high thermal conductivity, it guarantees low conduction and switching losses and thus high energy efficiency combined with robustness. The module is designed for current between 400 and 1,200 A and features enhanced DC stability. It can be used in an extended temperature range from -50 °C to 125 °C. It retains its blocking capability completely even below 0°C.
The new IHV module that is now available complements the existing product family, which currently consists of the module classes 3.3 kV, 4.5 kV and 6.5 kV, each in single-switch and dual-diode configurations. An extension of the 4.5 kV module class with a chopper and another diode configuration is planned for the beginning of 2014. For the first half of 2014 Infineon plans the launch of housing type B for applications in the area of medium voltage drives, power transmission including HVDC, and distribution and inverters for wind power stations.
