E-Mode GaN Transistor Works Like Silicon MOSFET for Easier Design-In

May 25, 2022

A spin-out of Cambridge University, Cambridge GaN Devices is a fabless semiconductor company that develops a range of energy-efficient enhancement-mode GaN-based power devices.

Alix Paultre 2

Related To: Electronic Design

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Cambridge GaN Devices (CGD), a spin-out of Cambridge University, is a fabless semiconductor company that develops a range of energy-efficient, enhancement-mode GaN-based power devices.CGD introduced ICeGaN, presented as the first enhancement-mode GaN transistor that can be operated like a silicon MOSFET without the need for special gate drivers, driving circuitry, or unique gate-voltage-clamping mechanisms.

Users can operate CGD’s GaN devices with standard gate drivers, up to 20 to 22 V. With a built-in Miller clamp and a threshold voltage set at around 3 V, users don’t need to provide negative gate voltages to keep the device OFF when it's supposed to be OFF.

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About the Author

Alix Paultre 2 | Editor-at-Large

An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the US military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications in the embedded electronic engineering space. Alix currently lives in Wiesbaden, Germany.

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