Advanced GaN Semiconductor Tech Enables High Power Densities

July 27, 2022

NexGen Power explains their vertical GaN transistor technology and how it can create power supplies that deliver high voltages and currents.

Alix Paultre

Related To: Electronic Design

Check out our DAC 2022 coverage.

NexGen Power’s Vertical GaN, presented as the first GaN-on-GaN power semiconductor technology, is unlocking improvements in power conversion. Gallium-nitride (GaN) transistors offer increased breakdown voltage and higher switching frequencies than silicon and silicon carbide (SiC). Vertical GaN devices have resilience to unexpected voltage disturbances, are self-healing, and supported circuits can often eschew external voltage-clamping components.

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About the Author

Alix Paultre | Editor-at-Large

An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the US military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications in the embedded electronic engineering space. Alix currently lives in Wiesbaden, Germany.

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