1200-V NPT-Trench IGBT Suits Induction Heating Applications

Oct. 12, 2005
Fairchild Semiconductor's FGA25N120ANTD 1200-V non-punch through-Trench IGBT combines avalanche immunity with optimized trade-off performance between switching and conduction losses to increase system reliability and efficiency in induction heating applications.

Fairchild Semiconductor's FGA25N120ANTD 1200-V non-punch through (NPT)-Trench IGBT combines avalanche immunity with optimized trade-off performance between switching and conduction losses to increase system reliability and efficiency in induction heating (IH) applications. Designed for microwave ovens as well as IH cookers, the FGA25N120ANTD extends system lifetime by lowering operating temperatures as much as 10°C over previous-generation devices. The NPT-Trench IGBT utilizes Fairchild's proprietary trench technology and NPT technology. This optimized cell design and thin wafer fabrication process allows the FGA25N120ANTD to withstand a maximum 450 mJ of avalanche energy.

Additional performance features and system benefits of the FGA25N120ANTD include low saturation voltage and low switching loss, which are respectively 2.0 V and 0.96 mJ for a collector current of 25 A and a case temperature of 25°C. The device also includes a built-in fast recovery diode. The FGA25N120ANTD is available in a TO-3P lead (Pb)-free package and meets or exceeds the requirements of the joint IPC/JEDEC standard J-STD-020B, and is compliant with European Union requirements now in effect. Pricing is $5.10 each for 1000-unit quantities.

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