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U.S. Invests $30 Million in GaN’s Future at GlobalFoundries

Oct. 28, 2022
To help ensure continued access to advanced technologies such as gallium nitride, funding through the DoD has been allocated to GlobalFoundries in efforts to accelerate production.

GlobalFoundries said it landed $30 million in federal funding to boost the development and production of gallium nitride (GaN) at its Vermont site, as the U.S. seeks to scale up domestic production of the advanced semiconductor.

The funds, secured by U.S. Senator Patrick Leahy as an appropriation in the latest U.S. government funding bill, will allow GlobalFoundries to buy tools and advance development of GaN-on-Si production on 200-mm wafers. With faster switching speeds and lower on-resistance (RDS(on)) than silicon, GaN has many unique properties that give it the ability to pump out higher power levels in smaller, more affordable packages that emit less heat.

The funding is separate from the recently passed CHIPS Act aimed at rebuilding U.S. manufacturing capacity for chips and upgrading the nation’s R&D facilities, which GlobalFoundries also hopes to exploit.

According to the company, upgrading the fab to manufacture GaN furthers its leadership in radio-frequency (RF) devices. GaN is gaining ground in 5G networks as well as defense and aerospace systems, such as radar.

GaN also is shaking up the silicon-dominated world of power electronics. It can be used to pack more power into everything from smartphones to electric cars, industrial motors, and renewable-powered grids.

DoD-Supported GaN Development

The funding is being facilitated by the Defense Microelectronics Activity (DMEA) via the Trusted Access Program Office (TAPO) of the U.S. Department of Defense. The unit is primarily responsible for procuring advanced chips for the nation’s most critical weapons systems.

“This engagement is just one step the DoD is taking to ensure the U.S. has continued access to advanced microelectronics technologies,” including GaN, said Nicholas Martin, director of the DMEA, in a statement.

Through TAPO, the Department of Defense has been supporting the development of GaN for both civilian and military systems for years. GaN is suited for high-power, high-frequency chips that the agency said it needs to maintain its technological edge.

Today, about 2,000 employees work at GlobalFoundries’ site, which has a current manufacturing capacity of more than 600,000 wafers per year. But it’s unclear what portion of the output in the future will be GaN.

The manufacturing site also serves as a “trusted” foundry, taking orders for secure chips in partnership with the DoD that will be used in some of its most sensitive aerospace and defense systems.

“With this new federal funding, and the potential for further support in the 2023 federal budget, GF is well-positioned to become a global leader in GaN chip manufacturing,” said GlobalFoundries CEO Tom Caulfield.

About the Author

James Morra | Senior Editor

James Morra is a senior editor for Electronic Design, covering the semiconductor industry and new technology trends, with a focus on power electronics and power management. He also reports on the business behind electrical engineering, including the electronics supply chain. He joined Electronic Design in 2015 and is based in Chicago, Illinois.

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