Adding to the iPEM family of DDR2 offerings is the AS4DDR264M72PBG1 4.8-Gb device in a 16 mm x 23 mm, 208-ball BGA with a ball pitch of 1 mm. Organized as 64M x 72, it delivers performance benchmarks up to 667 Mb/s while operating within the Mil-temperature range of -550?C to +1,250?C. Other features include differential data strobe (DQS, DQS#) per byte, an internal, pipelined, double-data-rate architecture, a DLL for alignment of DQ and DQS transitions with clock signal, eight internal banks for concurrent operation, programmable burst lengths of four or eight, auto-refresh and self-refresh Modes (I/T Version), on-die termination, programmable output drive strength, a 1.8V ±0.1V common core power and I/O supply, and a typical weight of 2g. AUSTIN SEMICONDUCTOR INC., Austin, TX. (512) 339-1188.
Company: AUSTIN SEMICONDUCTOR INC.
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