"Quiet" Three-Phase GaN IPM Has Very Low Dead Time

TI’s 650-V, 205-mΩ integrated GaN intelligent power module offers system protection and current sensing.
Aug. 8, 2024
Mesago | Uwe_mhlhue
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Rob Jamieson, Dreamstime
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In this video, Texas Instruments’ Dung Dang explains the company’s DRV7308 three-phase intelligent power module (IPM). The IPM leverages a 205-mΩ, 650-V, e-mode gallium-nitride (GaN) device to drive three-phase BLDC/PMSM motors with up to 450-V DC rails.

Targeting field-oriented control, sinusoidal current control, and trapezoidal (six-step) current control of BLDC motors, the device helps achieve more than 99% efficiency for a three-phase modulated, field-oriented-control (FOC)-driven, 250-W motor-drive application. Housed in a QFN 12- × 12-mm package, it operates at a 20-kHz switching frequency to eliminate the need for a heatsink.

The IPM helps achieve very quiet operation with a very low dead time thanks to an integrated bootstrap rectifier with current limiting, which eliminates the need for an external bootstrap diode.

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About the Author

Alix Paultre

Editor-at-Large, Electronic Design

An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the US military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications in the embedded electronic engineering space. Alix currently lives in Wiesbaden, Germany.

Also check out his YouTube watch-collecting channel, Talking Timepieces

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