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NVMe PCIe SSD Offers 3.2 TB of Memory

Sept. 26, 2014
For use in high-end enterprise server systems, Samsung has begun mass producing 3.2 TBytes NVMe (non-volatile memory express) PCIe solid state drives (SSDs) based on its 3D vertical NAND (V-NAND) flash memory technology.

For use in high-end enterprise server systems, Samsung has begun mass producing 3.2 TBytes NVMe (non-volatile memory express) PCIe solid state drives (SSDs) based on its 3D vertical NAND (V-NAND) flash memory technology. The SM1715 utilizes 3D V-NAND in an HHHL (half-height, half-length) card-type form factor. This doubles Samsung’s previous highest NVMe SSD density of 1.6 TBytes. It provides a sequential read speed of 3,000 MBytes/s and writes sequentially at up to 2,200 MBytes/s. It randomly reads at up to 750,000 IOPS (input output operations per second) and writes randomly at up to 130,000 IOPS. The SM1715 features 10 DWPDs (drive writes per day) for five years to ensure reliability. It comes in 1.6 TBytes and 3.2 TBytes versions.

SAMSUNG ELECTRONICS

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