SiC Schottky Barrier Diodes Built for High-Voltage xEV Systems
New surface-mount automotive-grade silicon-carbide (SiC) Schottky barrier diodes (SBDs) from ROHM Semiconductor are intended to improve insulation resistance by increasing the creepage distance between terminals. Intended to serve the rapidly expanding xEV (electric vehicles of all types) market, these SiC SBDs provide low heat generation along with high-speed switching and high-voltage capabilities in applications such as onboard chargers (see figure).
To meet manufacturers’ needs for compact surface-mount devices (SMDs) that can sustain higher-voltage operations, the new products utilize an original design that removes the center pin previously located at the bottom of the package. This extends the creepage distance to a minimum of 5.1 mm, approximately 1.3X greater than standard products.
The new pin configuration minimizes the possibility of tracking (creepage discharge) between terminals, which eliminates the need for insulation treatment through resin additional potting when surface mounting the device on circuit boards. The devices can also be mounted on the same land pattern as standard and conventional TO-263 package products, making replacement easier on existing circuit boards.
The initial lineup of AEC-Q101-qualified devices includes eight models (SCS2xxxNHR), available in two voltage ratings (–650 V and 1,200 V). Potential applications include:
- Automotive applications: Onboard chargers (OBCs), DC-DC converters, etc.
- Industrial equipment: AC servo motors for industrial robots, photovoltaic (PV) inverters, power conditioners, uninterruptible power supplies (UPS), etc.
All devices are available immediately, with sample pricing of $10.50/unit.
ROHM also plans to introduce eight additional models (SCS2xxxN) for industrial equipment such as FA devices and PV inverters in December 2024.
