IGBT Energy Losses Slashed to Boost Power Efficiency
Aug. 10, 2015
Fairchild Semiconductor has lowered energy loss by 30% in its 4th generation 650V and 1200V IGBT devices.
Fairchild Semiconductor has lowered energy loss by 30% in its 4th generation 650V and 1200V IGBT devices. Using a design approach tailored for high and medium speed switching applications in industrial and automotive markets, Fairchild has delivered high-performance with very strong latch up immunity for ruggedness and reliability. Fairchild demonstrated the approach with test results of several applications at PCIM Europe 2015.
Fairchild has applied an advanced high-density pitch, self-balancing cell build using a self-aligned contact technology for high current densities and dynamic switching features over the whole temperature range from -40º C to 175º C. The new design enables 4th generation IGBTs with low saturation voltage (Vce(sat) = ~ 1.65V) and low switching loss (Eoff = 5µJ/A) trade off characteristics for customers to achieve higher system efficiency. Along with the new generation, Fairchild will also make available a design and simulation infrastructure package calibrated for all low- and high-voltage power devices.
