Power Supply Delivers Pinpoint Ion Energy for Precise Wafer Etch
The drive toward higher levels of functionality in smaller form factors at the chip level places a great deal of pressure on wafer manufacturers to create ever more smaller and tighter features. This, in turn, demands very precise and accurate application of power to create them.
Addressing this demand, Advanced Energy released the eVoS Pulse DC Biased Power Solution. It's designed to achieve direct control of wafer-surface voltage and resulting ion energy distributions (IEDs) in plasma-based etch and deposition processes.
An asymmetric bias waveform generator, the eVos family of products combine a bidirectional voltage supply and an independent current source to establish and control wafer-surface potential. The asymmetric output of the eVoS system avoids the limitations and restrictions of wafer biasing inherent to sinusoidal RF bias application processes. By maximizing the ability to tailor ion energy, eVoS enables precise command of etch and deposition geometries at very small dimensions.
The ability to directly control wafer-surface voltage and ion energy distribution enables the optimization of bias performance for specific process results, ensuring sensitive feature formation. Solution attributes such as fast digital metrology and novel control algorithms make it possible to produce narrower IEDs compared to alternative legacy solutions.
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