E-Mode GaN Devices Satisfy Demanding Apps

With R_DS(on) levels as low as 25 mΩ, Cambridge GaN Devices' (CGD) ICeGaN P2 series of power ICs support multi-kilowatt power at the highest levels of efficiency. These high-power ICs offer a simplified gate-driver design and advanced high-performance packaging, enabling systems to achieve and exceed 100-kW/rack power density in data centers, for example. 

ICeGaN enhancement-mode gallium-nitride (GaN) transistors can be operated like a silicon MOSFET without special gate drivers, driving circuitry, or unique gate voltage-clamping mechanisms. 

The GaN devices work with standard gate drivers up to 22 V. A built-in Miller clamp with a threshold voltage set at around 3 V eliminates the need to provide negative gate voltages to keep the device OFF when desired. Additional features include integrated functions such as current sensing, and device cooling can be significantly improved by connecting CGD’s GaN to ground.

Related links:

• Cambridge GaN Devices
• P2 series 650-V/55-mΩ GaN HEMT with Dual Gate Pinout
• P2 series 650-V/25-mΩ GaN HEMT
• P2 series 650-V/25-mΩ GaN HEMT with Dual Gate Pinout
• P2 series 650-V/55-mΩ GaN HEMT