SiC Full-Bridge Modules Simplify Development of Solar Inverters, Battery-Charging Apps
SemiQ’s latest family of three 1,200-V SiC full-bridge modules integrate two of the company's rugged high-speed switching SiC MOSFETs with reliable body diode. The modules’ robust characteristics and high-performance thermal packaging help streamline the development of photovoltaic inverters, energy storage, battery charging, and other high-frequency DC applications.
Available in 18-, 38-, and 77-mΩ RDS(on) variants, the modules have been tested at voltages exceeding 1,350 V and deliver a continuous drain current of up to 102 A, a pulsed drain current of up to 250 A, and power dissipation of up to 333 W.
Operational with a junction temperature of up to 175°C, the rugged B2 modules have exceptionally low switching losses (EON 0.13 mJ, EOFF 0.04 mJ at 25°C for the 77-mΩ module), low zero-gate voltage drain/gate source leakage (0.1 µA/1 nA for all modules), and low junction-to-case thermal resistance (0.4°C per W for the 18-mΩ module).
The modules, which are available immediately, can be mounted directly to a heatsink. They’re housed in a 62.8- × 33.8- × 15.0-mm package (including mounting plates) with press-fit terminal connections and split DC negative terminals.
Datasheets for the GCMX020A120B2H2P (18 mΩ, 102 A), GCMX040A120B2H2P (38 mΩ, 56 A), and GCMX080A120B2H2P (77 mΩ, 27 A) 1,200-V full-bridge modules can be downloaded here.
