1,200-V SiC MOSFETs Feature Compact Packaging with Topside Cooling
At APEC 2025, Nexperia announced several important additions to its portfolio of enhancement-mode GaN and SiC devices. Among them is a new series of 1,200-V SIC MOSFETs available in thermally enhanced packaging for high-power, high-performance applications.
The new X.PAK package builds on some of the topside-cooling concepts developed by STMicroelectronics to provide extremely effective cooling within its compact form factor of 14 × 18.5 mm. In addition to topside cooling, the MOSFETs support heat dissipation via the PCB they’re mounted on. This suits them for industrial applications such as battery energy storage systems (BESS), photovoltaic inverters, motor drives, EV chargers, and uninterruptible power supplies (UPS).
Nexperia's X.PAK package also features an improved die connection technique, eliminating the need for bond wires and their associated parasitic effects. This leads to low inductance for surface-mount components and supports automated board assembly. It also makes it much easier for designers to create high-power outputs by connecting multiple devices in parallel without having to painstakingly match their electrical characteristics.
The advanced packaging, combined with the devices’ inherently high thermal stability, helps minimize the rise in RDS(on) they experience as output currents ramp up.
The initial portfolio includes products with RDS(on) values of 30, 40, and 60 mΩ (the NSF030120T2A0, NSF040120T2A1, and NSF060120T2A0, respectively); a part with 17 mΩ will be released in April 2025. An automotive-qualified SiC MOSFET portfolio in X.PAK packaging will follow later in 2025, as well as further RDS(on) classes like 80 mΩ.