Compact 650-V SiC MOSFETs Boost Power Density, Efficiency in Industrial Equipment
Toshiba Electronics announced volume shipments of its third-generation, 650-V silicon-carbide (SiC) MOSFETs— the TW031V65C, TW054V65C, TW092V65C, and TW123V65C—in the compact DFN8x8 package for industrial equipment.
Fabricated in the company’s next-generation process, the devices exhibit consistently low drain-source on-resistance (RDS(on)) temperature coefficient. The resulting (RDS(on)) × gate-drain charge (Qgd) figure of merit (FOM) delivers enhanced power density and efficiency for demanding high-voltage applications, including switched-mode power supplies (SMPS), electric-vehicle (EV) charging stations, uninterruptible power supplies (UPS), and photovoltaic inverters.
In addition, the multi-pin device allows a Kelvin connection of its signal-source pin for the gate drive, which reduces the inductance influence in the source wire within the package. It can reduce turn-on loss by as much as 55% and turn-off loss by as much as 25% compared to existing Toshiba products.
The devices’ surface-mount DFN8x8 package reduces volume by more than 90% compared to existing lead-inserted packages, such as TO-247 and TO-247-4L(X), while also reducing parasitic impedance.