Low-Loss 1,700-V SiC MOSFETs Fit Renewable, Energy Storage, EV Charging Apps
A family of 1,700-V SiC D-MOSFETs and power modules developed by SemiQ meet the needs of medium-voltage, high-power-conversion applications. Such apps include photovoltaic and wind inverters, energy storage, electric-vehicle and road-side charging, uninterruptible power supplies, and induction heating/welding.
The QSiC 1,700-V MOSFETs deliver low switching and conduction losses as well as low capacitance. They feature a rugged gate oxide for long-term reliability, with 100% of components undergoing wafer-level burn in (WLBI).
The MOSFETs are available either as a bare die, fabricated with a thermally efficient aluminum (Al) top side and nickel/silver (Ni/Ag) bottom side, or housed in a TO-247-4L package. Both versions support a maximum power-dissipation level of 564 W, with a continuous drain current of 83 A (at 25°C, 61 A at 100°C) and a pulsed drain current of 250 A (at 25°C).
The two 4-pin power modules feature a 38.0- × 24.8- × 11.7-mm SOT-227 design. They deliver an increased power dissipation of 652 W and increased continuous drain current of 123 A (at 25°C – GCMX015A170S1E1) and 88 A (at 25°C – GCMX030A170S1-E1).
In addition to low switching losses, both modules have a low junction-to-case thermal resistance of 0.19 °C and 0.36 °C per watt. They also feature an easy-mount design for direct mounting of the isolated package to a heatsink.
The half-bridge module is housed in a 61.4- × 106.4- × 30.9-mm, 9-pin S3 package. It has a power dissipation of 2,113 W with a continuous drain current of 397 A and a pulsed drain current of 700 A.
Datasheets for the 1,700-V MOSFETs and modules can be downloaded at the company's product home page.