• Home >
  • Technologies >
  • EDA >
  • Semiconductors

    • Silicon Carbide

    Image
    Though cost remains an issue, wide-bandgap GaN-on-Si and SiC transistors are expected to make inroads in mid-range to high-end designs for lower-power (200 V) and higher-power...
    Powerelectronics 3400 03549 Genesic Semiconductor
    GeneSiC Semiconductor announces the immediate availability of a line of compact, high temperature SiC Junction Transistors as well as a line of rectifiers in TO-46 metal can packages...
    Powerelectronics 2891 112414cree
    Cree, Inc. released the industry's first all-SiC 1.7kV power module in an industry standard 62mm housing.
    Powerelectronics 2482 251020genesic20semiconductor
    GeneSiC Semiconductor announces the immediate availability of a family of 1700V and 1200 V SiC Junction Transistors.
    Powerelectronics 3032 Waferprobe
    SiC properties are recognized as being advantageous for fabrication of power devices. Although substrate costs and defect densities are decreasing, SiC is not yet as mature and...
    Powerelectronics 3033 Jfetsictransistor
    SemiSouth Laboratories are delivering what is said to be the industry's first 650V 55mΩ SiC JFETs
    Powerelectronics 3034 Jfetsic
    CISSOID introduces a new version of HADES®, its turnkey isolated gate driver reference design, tailored to support SEMISOUTH silicon carbide (SiC), normally-off power JFETs (SJEP120R100...